收藏本站
?
Where:
I PEAK :
Peak current in the MOSFET right before it
is turned off.
Trise MOSFET ? Rth JA ? Pd MOSFET ? Rth JA ? Is 2 ? R DS ( on ) ,
Where:
V S :
Input voltage or load voltage at MOSFET
Rth JA :
Junction-to-Ambient thermal resistance
source before input short condition did
occur.
R DS(on) and PI2007 sensing:
t RVS :
Reverse fault to MOSFET turn-off time. This
The PI2007 senses the MOSFET source-to-drain
will include PI2007 delay and the MOSFET
turn off time.
L PARASITIC : Circuit parasitic inductance
And the MOSFET avalanche energy during an input
short is calculated as follows:
voltage drop via the SP and SN pins to determine the
status of the current through the MOSFET. When the
MOSFET is fully enhanced, its source-to-drain voltage
is equal to the MOSFET on-state resistance multiplied
by the source current, V SD = R DS(on) *Is. The reverse
current threshold is set for -6mV and when the
differential voltage between the SP & SN pins is more
2 * 1 . 3 V ( BR ) DSS ? V S
E AS ?
*
1 1 . 3 * V ( BR ) DSS
* L PARASITIC * I PEAK
2
negative than -6mV, i.e. SP-SN ? -6mV, the PI2007
detects a reverse current fault condition and pulls the
MOSFET gate pin low, thus turning off the MOSFET
Where:
and preventing further reverse current. The reverse
current fault protection disconnects the power source
E AS :
Avalanche energy
fault condition from the redundant bus, and allows the
system to keep running.
V ( BR ) DSS : MOSFET breakdown voltage
MOSFET R DS(on) and maximum steady state power
dissipation are closely related. Generally the lower the
MOSFET R DS(on) , the higher the current capability and
the lower the resultant power dissipation. This leads to
reduced thermal management overhead, but will
ultimately be higher cost compared to higher R DS(on)
parts. It is important to understand the primary design
goal objectives for the application in order to
effectively trade off the performance of one MOSFET
versus another.
Power dissipation in active ORing circuits is derived
from the total source current and the on-state
resistance of the selected MOSFET .
MOSFET power dissipation:
Pd MOSFET ? Is 2 ? R DS ( on )
Where :
Is :
Source Current
R DS(on) : MOSFET on-state resistance
Note:
In the calculation use R DS(on) at maximum MOSFET
temperature because
R DS(on)
is temperature
dependent. Refer to the normalized R DS(on) curves in
the MOSFET manufacturers datasheet. Some
MOSFET R DS(on) values may increase by 50% at
125°C compared to values at 25°C.
The Junction Temperature rise is a function of power
dissipation and thermal resistance.
Picor Corporation ? picorpower.com
PI2007
Rev 1.3
Page 12 of 19
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
PI2126-EVAL1 EVALUATION BOARD FOR PI2126
PI2127-EVAL1 EVAL BRD FOR PI2127 60V/12A
PI2161-EVAL1 EVALUATION BOARD FOR PI2161
PI2211-EVAL1 BOARD EVAL FOR PI2211
PI5101-EVAL1 EVALUATION BOARD FOR PI5101
PICOSMDC035S-2 POLYSWITCH PTC RESET .35A 0805
PIIPM25P12B008X IC PWR MODULE PROG ISO 25A 1200V
PK3020KB KIT KEYPAD, MOUSE, AND USB HUB
相关代理商/技术参数
PI200MC-A4 制造商:AMI 制造商全称:AMI 功能描述:200DPI CIS Module
PI201M-A4 制造商:AMI 制造商全称:AMI 功能描述:200DPI CIS Sensor
PI20-5,08 功能描述:可插拔接线端子 PCB Hdr, 45 Deg, 5,08 PitchOpen End, 20pole, 12A,300V,Grn RoHS:否 制造商:Phoenix Contact 产品:Plugs 系列:PTS 端接类型:Spring Cage 位置/触点数量:5 线规量程:26-14 节距:5 mm 电流额定值:10 A 电压额定值:250 V 安装风格: 安装角: 触点电镀:
PI-205M 制造商:Polycase 功能描述:Enclosure, Computer, Desktop, ABS,UL94-5VA, Blue, 4x3x1.375 In, For Raspberry Pi
PI2061-00-QEIG 制造商:Vicor Corporation 功能描述:PI2061 Series 8.5 - 10.5 V 4 A Load Disconnect Switch Controller IC - TDFN-10
PI207MC-A4 制造商:AMI 制造商全称:AMI 功能描述:200DPI CIS Module
PI2121 制造商:VICOR 制造商全称:Vicor Corporation 功能描述:8 Volt, 24 Amp Full-Function Active ORing Solution
PI2121-00-LGIZ 功能描述:IC OR CTRLR N-CH 17LGA RoHS:是 类别:集成电路 (IC) >> PMIC - O 圈控制器 系列:Picor®, Cool-ORing® 标准包装:1,000 系列:- 应用:电池备份，工业/汽车，大电流开关 FET 型:- 输出数:5 内部开关:是 延迟时间 - 开启:100ns 延迟时间 - 关闭:- 电源电压:3 V ~ 5.5 V 电流 - 电源:250µA 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:16-SOIC（0.154"，3.90mm 宽） 供应商设备封装:16-SOIC N 包装:带卷 (TR)